cystech electronics corp. spec. no. : c800s6r issued date : 2010.03.29 revised date : 2013.03.28 page no. : 1/7 MTDK5S6R cystek product specification esd protected dual n-channel mosfet MTDK5S6R bv dss 30v i d 250ma v gs =4v, i d =10ma 1.3 r dson(typ) v gs =2.5v, i d =1ma 2.7 description ? low voltage drive(2.5v drive) makes th is device ideal for portable equipment. ? the mosfet elements are independent , eliminating mutual interference. ? mounting cost and area can be cut in half. ? high speed switching ? esd protected device ? pb-free lead plating & halogen-free package symbol outline the following characteristics apply to both tr1 and tr2 absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage bv dss 30 v gate-source voltage v gs 20 v continuous drain current i d 250 ma pulsed drain current (t a =25 c) i dm 800 *1 ma total power dissipation p d 200 *2 mw esd susceptibility 1550 *3 v operating junction and storage temperature range tj ; tstg -55~+150 c thermal resistance, junction-to-ambient rth,ja 625 c/w note : *1. pulse width 10 s, duty cycle 1% *2. with each pin mounted on the recommended lands. *3. human body model, 1.5k in series with 100pf sot-363 MTDK5S6R tr1 tr 2
cystech electronics corp. spec. no. : c800s6r issued date : 2010.03.29 revised date : 2013.03.28 page no. : 2/7 MTDK5S6R cystek product specification thermal data parameter symbol value unit 625 (total) thermal resistance, channel-to-ambient, max *r th,ch-a 800 (per element) c/w note : with each pin mounted on the recommended lands. electrical characteristics (ta=25 c) symbol min. typ. max. unit test conditions static bv dss 30 - - v v gs =0, i d =100 a v gs(th) 0.8 1.2 1.5 v v ds =3v, i d =100 a i gss - - 5 a v gs = 20v, v ds =0 i dss - - 100 na v ds =30v, v gs =0 - 1.3 3 v gs =4v, i d =10ma r ds(on) - 2.7 5 v gs =2.5v, i d =1ma g fs 20 70 - ms v ds =3v, i d =10ma dynamic c iss - 31.5 - c oss - 7.3 - c rss - 5.5 - pf v ds =5v, v gs =0, f=1mhz t d(on) - 11 - t r - 6 - t d(off) - 42 - t f - 16 - ns v dd P 5v, i d =10ma, v gs =5v, r l =500 , r g =10 qg - 0.66 - qgs - 0.05 - qgd - 0.25 - nc i d =10ma, v ds =15v, v gs =4v source-drain diode *v sd - 0.8 1.2 v v gs =0v, i s =100ma *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping MTDK5S6R-0-t1-g sot-363 (pb-free lead plating & halogen-free package) 3000 pcs / tape & reel
cystech electronics corp. spec. no. : c800s6r issued date : 2010.03.29 revised date : 2013.03.28 page no. : 3/7 MTDK5S6R cystek product specification typical characteristics typical output characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0123456 v ds , drain-source voltage(v) i d , drain current(a) 3.5v 4v 3v v gs =2v 2.5v typical transfer characteristics 0 0.2 0.4 0.6 0.8 1 1.2 012345 v gs , gate-source voltage(v) i d , drain current(a) v ds =5v static drain-source on-state resistance vs drain current 1 10 100 1000 0.001 0.01 0.1 1 i d , drain current(a) r ds(on) , static drain-source on-state resistance() v gs =1.8v v gs =2.5v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25c tj=125c static drain-source on-state resistance vs gate-source voltage 0 1 2 3 4 5 6 7 01234 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance() i d =10ma drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =4v, i d =10ma
cystech electronics corp. spec. no. : c800s6r issued date : 2010.03.29 revised date : 2013.03.28 page no. : 4/7 MTDK5S6R cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 1 10 100 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 tj, junction temperature(c) v gs(th) , normalizedthreshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 0.001 0.01 0.1 1 i d , drain current(a) g fs , forward transfer admittance(s) pulsed ta=25c v ds =3v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -20 20 60 100 140 180 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v power derating curve 0 50 100 150 200 250 0 50 100 150 200 t a , ambient temperature() p d , power dissipation(mw) maximum drain current vs junction temperature 0 0.05 0.1 0.15 0.2 0.25 0.3 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =4v, r ja =800c/w
cystech electronics corp. spec. no. : c800s6r issued date : 2010.03.29 revised date : 2013.03.28 page no. : 5/7 MTDK5S6R cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c800s6r issued date : 2010.03.29 revised date : 2013.03.28 page no. : 6/7 MTDK5S6R cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c800s6r issued date : 2010.03.29 revised date : 2013.03.28 page no. : 7/7 MTDK5S6R cystek product specification sot-363 dimension marking: millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.900 1.100 0.035 0.043 e1 2.150 2.450 0.085 0.096 a1 0.000 0.100 0.000 0.004 e 0.650 typ 0.026 typ a2 0.900 1.000 0.035 0.039 e1 1.200 1.400 0.047 0.055 b 0.150 0.350 0.006 0.014 l 0.525 ref 0.021 ref c 0.080 0.150 0.003 0.006 l1 0.260 0.460 0.010 0.018 d 2.000 2.200 0.079 0.087 0 8 0 8 e 1.150 1.350 0.045 0.053 notes : 1 .controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . 6-lead sot-363r plastic surface mounted package cystek package code: s6r style: pin 1. source1 (s1) pin 2. gate1 (g1) pin 3. drain2 (d2) pin 4. source2 (s2) pin 5. gate2 (g2) 1 (d1) date code: year + month year : 6 2006, 7 2007,?, etc month : 1 jan 2 feb, ?, 9 sep, a oct, b nov, c dec pin 6. drain device code k 5
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